Lim Joon Hoong,




Inkjet printing,electronic band structure,thin films,thermoelectric,p-type semiconductor ,


In this paper, ZnxCu(1-x)Fe2O4 thin films were deposited by using inkjet printing and ZnxCu(1-x)Fe2O4 bulk pellets were synthesized through solid state method. Multiple print cycles were required to deposit homogeneous ZnxCu(1-x)Fe2O4 thin films. The obtained samples were characterized by X-ray diffraction (XRD), electrical conductivity, Seebeck coefficient and thermal conductivity. The XRD results confirmed the formation of cubic spinel structure of ZnxCu(1-x)Fe2O4 thin films and pellets. The electrical conductivity of ZnxCu(1-x)Fe2O4  (x=0.0) thin films sintered at 400 ºC (1.185x10-3 S/cm) had the higher values. The electrical conductivity of ZnxCu(1-x)Fe2O4 thin films was about 11% higher compared to ZnxCu(1-x)Fe2O4 pellets. The electronic band structure shows ZnxCu1-xFe2O4 is an indirect band gap material. The Fermi level of ZnxCu1-xFe2O4 was shift downward to the valence conduction band. It indicated ZnxCu1-xFe2O4 is a p-type semiconductor. Seebeck coefficient of ZnxCu(1-x)Fe2O4 thin films and pellets remained positive, confirming charge transport by hole carries. The presence of Zn served to decrease thermal conductivity of ZnxCu(1-x)Fe2O4 by 8 W/mK as Zn content increased from 0 to 1. The similarity observed in the change of properties might indicate that similar mechanisms are dominant in both the ZnxCu(1-x)Fe2O4 bulk pellets and the thin films.


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